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APT47N65BC3
600V 47A 0.070
Super Junction MOSFET
C OLMOS O
Power Semiconductors
TO
-24
7
D3
* Ultra low RDS(ON) * Increased Power Dissipation * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL
dv
All Ratings: TC = 25C unless otherwise specified.
APT47N65BC3 UNIT Volts Amps
Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
650 47 141 20 30 417 3.33 -55 to 150 260 50 20 1
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy
7 7
Volts Watts W/C C V/ns Amps mJ
/dt
IAR EAR EAS
Single Pulse Avalanche Energy
1800
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
650 0.06 0.5 0.07 25 250
(VGS = 10V, ID = 30A)
Ohms A nA Volts
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TJ = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
2.10
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com
050-7202 Rev A 3-2009
100
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT47N65BC3
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 47A @ 25C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 47A @ 125C RG = 1.8
6
MIN
TYP
MAX
UNIT
7015 2565 210 260 29 110 18 27 110 8 670 980 1100 1200 J ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
6
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 47A, RG = 5 INDUCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 47A, RG = 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns C
47 141 1.2 580 23 6
(Body Diode) (VGS = 0V, IS = -47A)
Reverse Recovery Time (IS = -47A, dl S/dt = 100A/s, VR = 350V) Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/s, VR = 350V) Peak Diode Recovery
dv
/dt
/dt
5
V/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.30 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.15 0.10 0.05 0 0.5
4 Starting Tj = +25C, L = 36.0mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS = -ID47A , di/dt = 700A/s VR = VDSS, TJ = 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
0.9
Note:
050-7202 Rev A 3-2009
PDM
0.3 SINGLE PULSE 0.1 0.05 10
-5
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
Typical Performance Curves
180 ID, DRAIN CURRENT (AMPERES) 160 140 120 100 80 60 40 20 0 5.5V 6V VGS =15 & 10V 6.5V
APT47N65BC3
RC MODEL Junction temp. (C)
.1426 0.345
Power (watts)
0.00375 .0084
.1566 0.455
Case temperature
.1333 0.101
5V 4.5V 4V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 120 ID, DRAIN CURRENT (AMPERES) 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO
1.30 1.20 1.10 1.00
V
GS
= 10V @ 23.5A
TJ = -55C TJ = +25C TJ = +125C
VGS=10V
VGS=20V 0.90 0.80
0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
10 20 30 40 50 60 70 80 90 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
50 ID, DRAIN CURRENT (AMPERES)
1.15
40
1.10
30
1.05
20
1.00
10
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 3
I = 47A
D
0 25
0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
2.5 2.0 1.5 1.0 0.5 0 -50
V
GS
= 10V
1.1 1.0 0.9 0.8 0.7 0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7202 Rev A
3-2009
Typical Performance Curves
188 100 50
OPERATION HERE LIMITED BY R (ON) DS
30,000 10,000 C, CAPACITANCE (pF)
APT47N65BC3
Ciss
ID, DRAIN CURRENT (AMPERES)
1,000
Coss
10 5 TC =+25C TJ =+150C SINGLE PULSE
100S
100 Crss
1mS 10mS 10
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16
I = 47A
D
1
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100
12 VDS= 120V 8 VDS= 300V VDS= 480V 4
TJ =+150C TJ =+25C 10
50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 350 300 250
V
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120
V
DD G
1
= 400V
td(off)
100 80 tr and tf (ns) 60 40 20
R
= 5W
T = 125C J L = 100H
tf
td(on) and td(off) (ns)
DD G
= 400V
200 150 100 50 0
R
= 5W
T = 125C J L = 100H
tr
td(on) 0 40 50 60 70 80 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V = 400V
10
20
30
40 50 60 70 80 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 4500
V
DD
0
0
10
20
30
2500
DD G
= 400V
R
= 5W
Eoff SWITCHING ENERGY (mJ)
4000 3500 3000 2500 2000 1500 1000 500
I = 47A
D
Eoff
SWITCHING ENERGY (mJ)
2000
T = 125C L = 100H EON includes diode reverse recovery.
J
T = 125C J L = 100H EON includes diode reverse recovery.
1500
1000
3-2009
Eon
500
Eon
050-7202 Rev A
40 50 60 70 80 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
10
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
APT47N65BC3
10% td(on)
Gate Voltage
TJ = 125 C
90% Gate Voltage
TJ = 125 C
td(off)
tf
90%
tr 90% 5%
Switching Energy
Collector Current
Collector Current
10%
5%
Collector Voltage
Collector Voltage Switching Energy
0 10%
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Drain Source
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7202 Rev A
3-2009

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